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闫大为

编辑:杨茜时间:2020-06-10点击数:

1.个人简介

闫大为,博士,1981年12月生,山东枣庄人,电子工程系副教授,硕士生导师,IEEE Member。2011年毕业于南京大学电子科学与工程系获博士学位,美国范德堡大学电子工程系访问学者。主要研究方向为功率芯片和应用模块的设计、可靠性与失效测试分析,以及电学和光电检测设备的硬件系统和软件的开发等。以第一或责任作者已发表科技SCI论文26篇,包括微电子器件领域顶级SCI期刊IEEE Electronic Device letters,IEEE Transactions on Electron Devices, IEEE Photonics Technology Letters, Applied Physics Letters等,被引500余次;主要建设了江南大学功率芯片和应用模块实验室,搭建了完备的半导体器件测试系统,并与多家知名半导体企事业单位建立了良好的合作关系;主持了多项纵向和横向课题,任多家主流SCI期刊评审人,包括APL, EDL,TED, PTL和JAP等;

代表性论文

[1]. Linna Zhao, Dawei Yan*, Zihui Zhang, Bin Hua, Guofeng Yang, Yanrong Cao, Enxia Zhang, Daniel M Fleetwood,Temperature-Dependent Efficiency Droop in GaN-Based Blue LEDs, IEEE Electron Device Letters,39(4), 528-531, 2018.

[2]. Linna Zhao, Leilei Chen, Dawei Yan*, Guofeng Yang, Xiaofeng Gu, Bin Liu, and Hai Lu, Tunneling-hopping transport model for reverse leakage current in InGaN/GaN blue light-emitting diodes, IEEE Photonics Technology Letters, 29(17),1447-1450, 2017.

[3]. Leilei Chen, Ning Jin, Dawei Yan*, Yanrong Cao, Linna Zhao, Hailian Liang, Bin Liu, Enxia Zhang, Xiaofeng Gu, Ronald D. Schrimpf, and Hai Lu, Charge Transport in vertical GaN Schottky Barrier Diodes: A Refined Physical model for Conductive Dislocations, IEEE Transactions on Electron Devices, 2020 67(3): 841-846.

[4]. Dawei Yan, Hai Lu*, Dunjun Chen, Rong Zhang, and Youdou Zheng, Forward tunneling current in GaN-based blue light-emitting diodes,Appl. Phys. Lett.96, 083504, 2010.

[5]. Dawei Yan, Hai Lu*, Dongsheng Cao, Dunjun Chen, Rong Zhang, and Youdou Zheng, On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors,Appl. Phys. Lett.97, 153503, 2010.

[6]. Jian Ren, Wenjie Mou, Linna Zhao, Dawei Yan*, Zhiguo Yu, Guofeng Yang, Shaoqing Xiao, and Xiaofeng Gu, A comprehensive study of reverse current degradation mechanisms in Au/Ni/n-GaN Schottky diodes,IEEE Transactions on Electron Devices, 2017 64(2): 407-411.

[7]. Dawei Yan, Jian Ren, Guofeng Yang, Shaoqing Xiao, XiaofengGu*, and Hai Lu*, Surface acceptor-like trap model for gate leakage current degradation in lattice-matched InAlN/GaN HEMTs,IEEE Electron Device Letters, 2015 36(12): 1281-1283.

[8]. Jian Ren, Dawei Yan*, Guofeng Yang, Fuxue Wang, Shaoqing Xiao, and XiaofengGu, Current transport mechanisms in lattice-matched InAlN/GaNSchottky diodes,Journal of Applied Physics, 117,154503,2015.

[9]. Dawei Yan, Jinping Jiao, Jian Ren, Guofeng Yang, and XiaofengGu*, Forward current transport mechanisms in Ni/Au-AlGaN/GaNSchottky diodes,Journal of Applied Physics, 114, 144511, 2013.

[10]. Dawei Yan, Hai Lu*, Dunjun Chen, Rong Zhang, and Youdou Zheng, Distribution of deep-level traps at atomic-layer-deposited Al2O3/n-GaN interface,Solid-State Electronics, 72, 56, 2012.

2.研究生教育

硕士生

学术型研究生招生专业:电子科学与技术

专业型研究生招生专业:集成电路工程

3.联系方式

通信地址:江苏省无锡市蠡湖大道1800号 江南大学物联网工程学院B225

邮编:214122

Email:daweiyan@jiangnan.edu.cn

http://iot.jiangnan.edu.cn/__local/2/DB/13/8A53B7D6E13851B0FFA63A511E4_5B646460_8678.jpg

技术支持:信息化建设与管理中心

地址:江苏省无锡市蠡湖大道1800号

邮编:214122

联系电话:0510-85910633

服务邮箱:iot@jiangnan.edu.cn