闫大为

编辑:物联网工程学院时间:2016-06-02点击数:

1.个人简介

闫大为,博士,1981年生,山东枣庄人,电子工程系副教授,硕士生导师,美国IEEE会员。2011年毕业于南京大学电子科学与工程系获博士学位(师从杰青、长江学者陆海教授);主要研究方向为宽禁带III族氮化物半导体器件物理和工艺,目前的主要兴趣为GaN HEMTs的电学可靠性和高性能紫外探测器的研制;在国际重要学术刊物上已发表SCI论文30篇多篇,以第一和责任作者已发表科技论文20多篇,包括微电子器件领域权威主流SCI期刊IEEE Electronic Device letters,IEEE Transactions on Electron Devices, IEEE Photonics Technology Letters, Applied Physics Letters,Journal of Applied Physics和Solid-State Electronics等,被引次数200余次,单篇最高次数70次;建设了固态器件特性测试和分析实验室,搭建了完备的半导体器件测试系统,包括变温电流-电压,电容-电压特性测试系统,低频噪音测试系统,光谱响应测试系统,电致发光测试系统,和微光成像测试系统等;多家SCI期刊评审人,包括APL, EDL, TED,JAP, Scientific Reports和ACSApplied interface and materials等;主持的纵向课题包括:江苏省自然科学基金项目(结题),中国博士后一等资助项目(结题),中央高校基础科研重点项目(在研)和国家自然科学基金青年项目(在研)。

代表性论文:

[1]. Linna Zhao, Leilei Chen, Dawei Yan*, Guofeng Yang, XiaofengGu, Bin Liu, and Hai Lu, Tunneling-hopping transport model for reverse leakage current in InGaN/GaN blue light-emitting diodes, IEEE Photonics Technology Letters, 2017 (Accepted).

[2]. Linna Zhao, Peihong Yu, Dawei Yan*, Hao Zhou, Jinbo Wu, Zhiqiang Cui, Huarui Sun, and XiaofengGu, Progressive current degradation and breakdown behavior in GaN LEDs under high reverse bias stress, Chinese Physics B, 2017. (In press)

[3].WenjieMou, Linna Zhao, Leilei Chen, Dawei Yan*, Huarong Ma, Guofeng Yang, Feng Xie, and XiaofengGu, GaN-based Schottky barrier ultraviolet photodetectors with graded doping on patterned sapphire substrates, Solid-State Electronics, 133: 78-82, 2017.

[4]. Dawei Yan,Hai Lu*, Dunjun Chen, Rong Zhang, and Youdou Zheng, Forward tunneling current in GaN-based blue light-emitting diodes,Appl. Phys. Lett.96, 083504, 2010.[被引用次数:57]

[5]. Dawei Yan, Hai Lu*, Dongsheng Cao, Dunjun Chen, Rong Zhang, and Youdou Zheng, On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors,Appl. Phys. Lett.97, 153503, 2010.[被引用次数:70]

[6]. Jian Ren, WenjieMou, LinnaZhao,Dawei Yan*, Zhiguo Yu, Guofeng Yang, Shaoqing Xiao, and XiaofengGu, A comprehensive study of reverse current degradation mechanisms in Au/Ni/n-GaNSchottky diodes,IEEE Transactions on Electron Devices, 2017 64(2): 407-411.

[7]. Dawei Yan, Jian Ren, Guofeng Yang, Shaoqing Xiao, XiaofengGu*, and Hai Lu*, Surface acceptor-like trap model for gate leakage current degradation in lattice-matched InAlN/GaN HEMTs,IEEE Electron Device Letter, 2015 36(12): 1281-1283.

[8]. Jian Ren,Dawei Yan*, Guofeng Yang, Fuxue Wang, Shaoqing Xiao, and XiaofengGu, Current transport mechanisms in lattice-matched InAlN/GaNSchottky diodes,Journal of Applied Physics, 117,154503,2015.

[9]. Dawei Yan, Jinping Jiao, Jian Ren, Guofeng Yang, and XiaofengGu*, Forward current transport mechanisms in Ni/Au-AlGaN/GaNSchottky diodes,Journal of Applied Physics, 114, 144511, 2013.[被引用次数:13]

[10]. Dawei Yan,Hai Lu*, Dunjun Chen, Rong Zhang, and Youdou Zheng, Distribution of deep-level traps at atomic-layer-deposited Al2O3/n-GaN interface,Solid-State Electronics, 72, 56, 2012.[被引用次数:7]

[11]. Dawei Yan*, Zhaomin Zhu, Jianmin Cheng, XiaofengGu, and Hai Lu, Forward current transport mechanism and Schottky barrier characteristics of Ni/Au contact on n-GaN,Chinese Physics Letters, 29, 087204, 2012.

[12]. Dawei Yan, Lisha Li, Jinping Jiao, Hongjuan Huang, Jian Ren, and XiaofengGu*, Capacitance characteristics of Atomic-layer deposited Al2O3/n-GaN MOS structure,ActaPhysicaSinica, 62, 197203, 2013.

[13]. Dawei Yan*, Lisha Li, Jian Ren, Fuxue Wang, Guofeng Yang, Shaoqing Xiao, XiaofengGu, Electron leakage related low-temperature light emission efficiency behavior in GaN-based blue light-emitting diodes,Journal of Semiconductors,35(4), 044007, 2014.

[14]. Dawei Yan*, Fuxue Wang, Zhaomin Zhu, Jianmin Cheng, and XiaofengGu, Capacitance and conductance dispersion study in AlGaN/GaN hetero-structure,Journal of Semiconductors, 34, 014003, 2013.

[15]. ZhaoxianWang,Dawei Yan*, Dandan Zhang, and XiaofengGu, Temperature dependent characteristics of Ti/Al/Ni/Au ohmic contact on lattice-matched InAlN/GaNheterostructures,Chinese Science Bulletin, 61,1130-1134,2016.

[16]. Lisha Li, JieGuan,Dawei Yan*, Guofeng Yang, Shaoqing Xiao, and XiaofengGu, Current and light emission efficiency behaviors in GaN-based LEDs,2014IEEE 12thInternational Conference on Solid-State and Integrated Circuit Technology, Oct. 28-31 2014, Guilin, China.

[17]. Jian Ren,Dawei Yan*, XiaofengGu, Degradation mechanism of leakage current in AlGaN/GaN high electron mobility transistors,ActaPhysicaSinica, 62, 157202,2013.

[18]. HongjuangHuang,Dawei Yan*, Guosheng Wang, Feng Xie, Guofeng Yang, Shaoqing Xiao, and XiaofengGu, GaN-based p-i-n ultraviolet photodetectors with a thin p-type GaN layer on patterned sapphire substrates,Chinese Optics Letters, 12, S292301, 2014.[IF=1.899,被引用次数:7]

[19]. Guofeng Yang, Jianjun Chang, Jianli Zhao, Yuying Tong, Feng Xie, Jin Wang, Qing Zhang, Hongjuan Huang,Dawei Yan*, Investigation of light output performance for gallium nitride-based light-emitting diodes grown on different shapes of patterned sapphire substrate,Material Science in Semiconductor processing, 33, 49, 2015.

[20]. Jian Ren,Dawei Yan*, Yang Zhai, Guofeng Yang, XiaofengGu*, Hot electrons induced degradation in lattice-matched InAlN/GaN high electron mobility transistors,Microelectronics Reliability, 2016, 56: 34-36.

[21]. Jian Ren,Dawei Yan*, Yang Zhai, WenjieMou, XiaofengGu*, Comparison of electrical characteristics between AlGaN/GaN and lattice-matched InAlN/GaNheterostructureSchottky barrier diodes [J].Microelectronics Reliability, 2015,61:82-86.

2.研究生教育

硕士生

学术型研究生招生专业:

微电子学与固体电子学

专业型研究生招生专业:

集成电路工程

3.联系方式

通信地址:江苏省无锡市蠡湖大道1800号江南大学物联网工程学院

邮编:214122

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技术支持:信息化建设与管理中心

地址:江苏省无锡市蠡湖大道1800号

邮编:214122

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