肖少庆

编辑:物联网工程学院时间:2016-06-14点击数:

肖少庆

1. 个人简介

肖少庆,校聘教授,电子工程系主任,2008年获得上海交通大学博士学位,主要从事低温等离子体技术以及新型半导体材料与器件的研究工作,在低温等离子体技术(包括等离子体的产生、诊断与控制),硅基太阳能电池中的表面钝化和性能调控、二维半导体材料的化学气相沉积(CVD)制备与光电性能调控等方面取得了一系列创新性成果。已在包括Materials Science and Engineering R-Reports, Advanced Energy Materials, ACS Applied Materials & Interfaces, Scientific Reports, Applied Physics Letters, Applied Surface Science, Journal of Applied Physics等在内的国际重要学术期刊发表SCI论文47篇(第一作者及通讯作者论文21篇),H-index = 14,被引用438次;应邀为Springer和Taylor and Francis撰写专著章节各1章。自从2013年8月加入江南大学以来,成立了先进等离子体半导体材料与器件实验室,搭建了非平行板式电容耦合温和等离子体(CCEP)系统、等离子体原子化沉积(PAD)系统和限域空间CVD系统,将先进等离子体技术应用于硅基太阳能电池中的表面钝化和性能调控,将温和等离子体技术应用于二维半导体材料的制备与光电性能的调控,并采用限域空间CVD制备了高质量的二维半导体材料,作为第一作者兼通讯作者在Materials Science and Engineering R-Reports(影响因子29.280),Critical Reviews in Solid State and Materials Science (影响因子6.455),Catalysis Today(影响因子4.636),Scientific Reports(影响因子4.259)等SCI期刊发表论文6篇,作为通讯作者在ACS Applied Materials & Interface(影响因子7.504), Particle and Particle Systems Characterization(影响因子:4.474),Applied Surface Science(影响因子:3.387)和Journal of Physics D: Applied Physics等SCI期刊发表论文8篇, 获得国内授权发明专利1项,申请国内发明专利5项。主持省部级以上纵向项目3项,分别是国家自然科学基金-青年基金项目,江苏省自然科学基金-青年基金项目以及江苏省产学研联合创新资金研究项目,另外还主持一项横向项目。2014年入选无锡市社会事业领军人才,获得2016年中国商业联合会科学技术进步奖二等奖,获得江南大学2015和2016年度至善学者B类称号,获得江南大学2017年度至善学者A类称号,兼任中国国际石墨烯资源产业联盟国际标准工作委员会委员和全国纳米技术标准化技术委员会低维纳米结构与性能工作组委员。

代表性论文

(1) X. M. Zhang, H. Y. Nan, S. Q. Xiao*, X. Wan, Z. H. Ni, X. F. Gu* and K. Ostrikov, Shape-uniform, High-quality Monolayer MoS2 Crystals for Gate-tuneable Photoluminescence, ACS Applied Materials & Interfaces, 2017, 9, 42121-42130 (影响因子7.504)(中科院分区1区)

(2) S. Q. Xiao*, S. Xu and K. Ostrikov, Low-temperature Plasma Processing for Si Photovoltaics, Materials Science and Engineering R-Reports 2014, 78, 1(影响因子:29.280)(中科院分区1区)

(3) Di Cai, Shaoqing Xiao*, Haiyan Nan, Xiaofeng Gu and Kostya (Ken) Ostrikov, Robust fabrication of quantum dots on few-layer MoS2 by soft hydrogen plasma and post annealing, Particle and Particle Systems Characterization 2018, accepted. (影响因子:4.474)(中科院分区二区)

(4) L. F. Zhang, S. P. Feng, S. Q. Xiao*, G. Shen, X. M. Zhang, H. Y. Nan, X. F. Gu and K. Ostrikov, Layer-controllable graphene by plasma thinning and post-annealing, Applied Surface Science, 2018, 441, 639-646 (影响因子:3.387)(中科院分区2区)

(5) J. J. Liu, Y. Yao, S. Q. Xiao* and X. F. Gu, Review of status developments of high-efficiency crystalline silicon solar cells, Journal of Physics D: Applied Physics 2018, 51, 123001 (影响因子:2.588) (中科院分区2区)

(6) Y. Yao, X. Y. Xu, X. M. Zhang, H. P. Zhou, X. F. Gu and S. Q. Xiao* Enhanced efficiency in HIT solar cells by gradient doping, Materials Science in Semiconductor Processing, 2018, 77, 16-23 (影响因子:2.359)

(7) Y. Yao, S. Q. Xiao*, X. M. Zhang, X. F. Gu, Simulation optimizing of n-type HIT solar cells with AFORS-HET, Modern Physics Letters B 2017, 31, 1740025

(8) Y. F. Sha, S. Q. Xiao*, X. M. Zhang, F. Qin and X. F. Gu, Layer-by-layer thinning of MoSe2 by soft and reactive plasma etching, Applied Surface Science, 2017, 411, 182-188. (影响因子:3.387)(中科院分区2区)

(9) S. Q. Xiao*,P. Xiao, X. C. Zhang, D. W. Yan, F. Qin, Z. H. Ni, X. F. Gu, J. H. Zhao and K. Ostrikov, Atomic-layer soft plasma etching of MoS2, Scientific Reports 2016,6,19945 (影响因子:4.259)

(10) S. Q. Xiao*, S. Xu, X. F. Gu, D. Y. Song, H. P. Zhou and K. Ostrikov, Chemically active plasmas for surface passivation of Si Photovoltaics, Catalysis Today, 2015, 252, 201 (影响因子:4.636) (中科院分区2区)

(11) S. Q. Xiao*, J. J. Zhou, S. Y. Huang, P. Xiao, X. F. Gu, D. W. Yan and S. Xu, Highly textured conductive and transparent ZnO films for HIT solar cell applications, Journal of Physics D: Applied Physics 2015, 48, 305105 (中科院分区2区)

(12) H. P. Zhou, S. Xu*, S. Q. Xiao* and Y. Xiang, Nanocrystalline silicon embedded in silicon suboxide synthesized in high-density inductively coupled plasma, Journal of Physics D: Applied Physics 2015, 48, 445302 (中科院分区2区)

(13) S. Q. Xiao* and S. Xu, High-efficiency Silicon Solar Cells-Materials and Device Physics, Critical Reviews in Solid State and Materials Sciences 2014, 39, 277 (影响因子:6.455)(中科院分区2区)

(14) S. Q. Xiao*, S. Xu, H. P. Zhou, D. Y. Wei, S. Y. Huang, L. X. Xu, C. C. Sern, Y. N. Guo, S. Khan, and Y. Xu, Silicon homojunction solar cells via a hydrogen plasma etching process, Journal of Physics D: Applied Physics 2013, 46, 105103 (中科院分区2区)

(15) S. Q. Xiao*, S. Xu, H. P. Zhou, D. Y. Wei, S. Y. Huang, L. X. Xu, C. C. Sern, Y. N. Guo and S. Khan, Amorphous/crystalline silicon heterojunction solar cells via remote inductively coupled plasma processing, Applied Physics Letters 2012, 100, 233902. (影响因子:3.411)(中科院分区2区)

(16) S. Q. Xiao and S. Xu, Plasma-aided fabrication in Si-based photovoltaic applications: an overview,Journal of Physics D: Applied Physics 2011, 44, 174033. (中科院分区2区)

(17) S. Q. Xiao, S. Xu, D. Y. Wei, S. Y. Huang, H. P. Zhou and Y. Xu, From amorphous to microcrystalline: Phase transition in rapid synthesis of hydrogenated silicon thin film in low frequency inductively coupled plasmas, Journal of Applied Physics 2010, 108, 113520. (影响因子:2.068)

2. 研究生教育

硕士生

学术型研究生招生专业:微电子学与固体电子学

专业型研究生招生专业:集成电路工程

3. 联系方式

通信地址:江苏省无锡市蠡湖大道1800号 江南大学物联网工程学院

邮编:214122

电话:

Email: larring0078@hotmail.com or xiaosq@jiangnan.edu.cn

技术支持:信息化建设与管理中心

地址:江苏省无锡市蠡湖大道1800号

邮编:214122

联系电话:0510-85910633,85910631

服务邮箱:iot@jiangnan.edu.cn