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Master advisors

Liang,Hailian

Date of Birth: 1979.10 Nationality: Chinese

School：Jiangnan University  Degree：PhD Major：Design and study of IC reliability Marital Status: Married

Phone：+86-13915288005 Email：lhl2010@jiangnan.edu.cn Address：Department of Electronic Engineering, Jiangnan University,

Wuxi 214122, China


BACKGROUND：

Occupation: An associate professor of Microelectronics at Jiangnan University, the master supervisor

Teaching Courses: Circuit Theory, Analog Electronics and Microelectronics Experiments

Research interests: The novel electrostatic discharge (ESD) protection device design for on-chip ESD protection and the TCAD simulations of 2D and 3D semiconductor devices.

EDUCATION：


09/2016-08/2017

the Computer Science and Electronic Engineering of the Central Florida University,

Florida, USA, the visiting scholar

09/2010-12/2014

Jiangnan University, School of Information Engineering, Light industry information

technology and engineering（PhD）

01/2004-05/2007

Jiangnan University, School of Information Engineering, Light industry technology and


09/1997-07/2001

engineering（M.S.）

Nanchang University, School of Science, Physics （B. S.）

RESEARCH PROJECTS：

1. Design of ESD protection devices and investigation of snapback voltage clamping model in HV PIC, coming from “The Natural Science Foundation of Jiangsu Province (BK20150156, 2015)”.

2. Design of LDMOS-SCR HV ESD protection devices and investigation of latch-up characteristics evaluation model, coming from “The Natural Science Foundation of China (61504049, 2015)”.

3. Design and study of ESD protection devices for Si-based IC with the different operation environment

4. Development and investigation of radio transmitters

5. Research on electromagnetic compatibility of EPON optical fiber communication module of smart power meter

6. Study on the long-life circuit of distributed photovoltaic module micro-optimizer


PUBLICATIONS：

Parts of papers：

[1] Hailian Liang, Xiaofeng Gu, Shurong Dong, Juin J. Liou. “RC-Imbedded LDMOS-SCR with High Holding Current for High-Voltage I/O ESD Protection” IEEE Transactions on Device and Materials Reliability, 15(4): 495-499, 2015

[2] Hailian Liang, Weidong Nie, Xiaofeng Gu, Shurong Dong, W.S. Laub. “An investigation on capacitance-trigger ESD protection devices for high voltage integrated circuits” Microelectronics Reliability, 54(6): 1169-1172, 2014


[3] Hailian Liang, Xiaofeng Gu, Shaoqing Xiao, Shurong Dong, Jian Wu, Lei Zhong. “A modified LDMOS device with improved ESD protection performance” IEEJ Transactions on Electrical and Electronic Engineering, 9(6): 700-702, 2014

[4] Hailian Liang, Shurong Dong, Xiaofeng Gu, Lei Zhong, Jian Wu, Zongguang Yu. “Investigation of the trigger voltage walk-in effect in LDMOS for high-voltage ESD protection” Journal of Semiconductors, 35(9): 094005, 2014

[5] Hailian Liang, Shurong Dong, Xiaofeng Gu, Mingliang Li, Yan Han. “ESD protection design of DDSCR structure based on the 0.5 μm BCD process” Journal of Zhejiang University (Engineering Science), 47(11): 2046-2050, 2013

[6] Hailian Liang, Bing Yang, Xiaofeng Gu, Yichen Ke, Guoping Gao. “Modeling and Analysis of Holding Voltage in BJT-based ESD Protection Device” Research and process of SSE, 32(5): 446-450, 2012

[7] Hailian Liang, Shurong Dong, Xiaofeng Gu, Yan Han. “Whole Chip ESD Protection Design for 2.4 GHz LNA” Research and process of SSE, 32(6): 562-564, 2012

[8] Hailian Liang, Shurong Dong, Xiaofeng Gu, Mingliang Li, Yan Han. “Effects of Finger Width and Metal Routing of GGNMOS on ESD Protection” Research and process of SSE, 33(2), 194-198, 2013

[9] Hailian Liang, Long Huang, Xiaofeng Gu, Huafeng Cao, Shurong Dong, Juin J. Liou. “Key factors affecting trigger voltage of SCRs for ESD protection” ICSICT2014, 10.28~31, Guilin, China, 2014

Parts of Patents：

[1] Hailian Liang, Xiaofeng Gu. “Portable multifunctional heating and thermal insulation kit of activity type”,

ZL201110143078.5, China

[2] Hailian Liang, Xiaofeng Gu, Long Huang, Shurong Dong, Jian Wu. “A ring VDMOS structure ESD protection device with high holding current”, ZL201310657917.4, China

[3] Hailian Liang, Long Huang, Xiuwen Bi, Xiaofeng Gu, Shurong Dong. “A LDMOS-SCR structure ESD self-protection device with high holding current and strong ESD robustness”, ZL201410024428.X, China [4]Hailian Liang, Xiaofeng Gu, Shurong Dong, Sheng Ding. “A vertical NPN triggered HV ESD protection device with high holding voltage”, ZL201210549225.3, China

[5] Hailian Liang, Xiaofeng Gu, Shurong Dong, Long Huang. “A bi-directional substrate-triggered HV ESD protection device”, ZL201210548959.X, China

[6] Hailian Liang, Xiaofeng Gu, Shurong Dong, Sheng Ding. “A ring structure LDMOS-SCR HV ESD protection device with double latch-up immunity”, ZL201310677835.6, China

[7] Hailian Liang, Xiaofeng Gu, Shurong Dong, Jian Wu, Long Huang. “A HV ESD protection device with bi-directional and triple conduction paths”, ZL201210504669.5, China


Host education technical department of jiangnan university. Address: no.1800, lihu avenue, wuxi, jiangsu, 214122
Technical support: information construction and management center. All copyright © jiangnan university